HZB for Materials and Energy recognized DCA Instruments as the top choice for high-quality MBE Systems

Helmholtz-Zentrum Berlin (HZB) for Materials and Energy selected DCA Instruments as the best option for a new MBE System.

The custom-designed system will feature an R450 MBE chamber connected to a Cluster Tool Robot. This advanced capability allows users to automatically transfer of substrates between the process and storage chambers.

System installation is expected in Spring 2018.

Trinity College Dublin announces DCA Instruments to provide bespoke Multi-MBE/Sputter Deposition System

DCA Instruments won the competitive contract for the new Multi-MBE/Sputter deposition system at Trinity College Dublin (Ireland).

This versatile and complex system is to include two R450 Sputter chambers, a pulsed laser deposition chamber (PLD 500), an R450 MBE reactor, and a Cluster Tool Robot for automated substrate transfer.

System installation is expected in Spring 2018.

 

Top Chinese University USTC to install DCA Instruments Multi-MBE System

In Autumn 2018, the first of two MBE installations will take place at University of Science and Technology of China (USTC). The first part includes a P600 reactor with linear buffer chamber. The second part will see a further two reactors, an M600 and R450, as well as an Oxygen Delivery System (ODS) installed by the end of the year.

DCA Instruments wins competitive bid for University of Sheffield MBE System

DCA Instruments succeeded in demonstrating its high-quality and cost-effective MBE systems and technologies was the best option for University of Sheffield (UoS).  A state-of-the-art Dual-MBE Cluster Tool system with automated substrate transfer capabilities will be installed in the Spring 2018.

Hybrid-MBE system installation at Penn State University

DCA has installed a new Hybrid MBE system at Penn State University this May. The system design facilitates the deposition of metal organic molecules and thus combines low energetic deposition techniques in a unique way, dubbed “Hybrid MBE”.
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P600 MBE system installed at the Shanghai Institute of Technical Physics

DCA has completed the installation of a P600 MBE system at the Shanghai Institute of Technical Physics (SITP) of the Chinese Academy of Sciences.

The P600 is designed to grow high-quality thin films of III-V semiconductors, with a focus on phosphorous compounds. The system features a linear buffer chamber with preheating stage (950oC) for degassing and cleaning samples prior to entering the growth chamber.

State-of-the-art reactive-oxide MBE system installed at University of St. Andrews

This summer DCA installed a state-of-the-art dual-chamber MBE system at the School of Physics and Astronomy, University of St. Andrews in Scotland. The custom-designed MBE system boasts two R450  growth chambers, a DCA-patented o-zone delivery system, and a linear buffer chamber equipped with sample storage.  A bespoke vacuum suitcase that enables the transportation and transfer of samples under UHV to external analysis systems  is included with the system.  This unique DCA system provides a gateway to producing promising new technological applications.
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Published Article – Physics Review B – SIMIT

The Shanghai Institute of Microsystem and Information Technology (SIMIT) took advantage of combining reactive MBE (DCA Instruments R450) and in-situ angle-resolved photoemission spectroscopy to systematically study the evolution of the low-energy electronic structure of SrRuO3 films with thickness thinning down to a nearly two-dimensional limit. Read more

Published Article – Nature Communications – Max Planck Institute

Dr. Gennady Logvenov at the Max Planck Institute employed the DCA R450 dual oxide MBE system to synthesize more than 100 epitaxial superlattices, in which single LaO layers in the La2CuO4 structure were substituted by SrO layers with the desired periodicity. The study represents a successful example of two-dimensional doping of superconducting oxide systems and demonstrates its power in this field. Read more

Published Article – Crystal Growth and Design – Paul Drude Institute

The Paul-Drude-Institute in Berlin employed the DCA P600 plasma-assisted MBE system to develop a novel technique for integrating strain-free GaN crystals on micrometer-sized patterned Si(0 0 1) substrates. The good optical properties together with the faceted morphology of the GaN crystals could be beneficial for the integration of space filling, multidirectional III−N/Si(0 0 1) light-emitting diodes. Read more