The S450 UHV sputtering system is for co-deposition of up to six materials. The UHV magnetrons can be configured for magnetic materials and are powered with DC or RF power allowing a wide range of materials to be deposited. The sputter geometry is either sputter up or sputter down.
The substrate manipulator has various options depending on the application. The substrate heating is up to 1000 oC and can be optionally RF or DC biased. An oxygen resistant heater is available for deposition of oxide materials. The maximum substrate size is 4″ in diameter.
The S450 system includes a computer controlled gas manifold for up to four process gases. The sputtering gas regulation allows upstream or downstream gas flow control.
Sputtering is one of the most widely used techniques of thin film deposition of metals, dielectrics and ceramics, that often have a high melting point, such as Al, B, Cr, Ta and Si. Thin films grown via sputter deposition are known for high uniformity and the constitution of the thin film closely follows that of the target materials – as well as having strong adhesion and low density of defects and impurities.
Sputter deposition, in brief, is a physical vapor deposition method where energetic ions created in plasma are bombarded to a solid target to eject target atoms into gas phase and further on to form epitaxial layers of coating on a nearby substrate.
DCA designs and manufactures advanced and integrated UHV sputtering systems. Let us know about your custom requirements and specs for your unique deposition system, and we’ll get back to you with your dream system design!
Below are presented examples of some advanced sputtering systems that DCA has delivered for our exceptional thin film growing customers.
L400 UHV sputtering system is a unique deposition system for sequential sputtering. The system feautures a cryopumped UHV linear chamber in which six magnetron cathodes are arranged along a movable arm that is translated back and forth to sequentially deposit layered films on a substrate (up to three RF magnetrons and three DC/pulsed DC magnetrons). The substrate position has four shutters which can be positioned to confine the deposition area by shadowing. The computer controlled shutters can be moved during the deposition to create wedge-shaped thickness gradients across the substrate.
The chamber has a substrate manipulator which can be RF or DC biased , heated up to 1000°C and can have a magnetic field imposed at the substrate plane during deposition or annealing.
The L400 sputtering system is ideal for combinatorial thin film deposition.
L400 UHV sputtering system with linear magnetron array
Video animation of L400 operation. Video courtesy of Prof. Dr.-Ing Alfred Ludwig, Ruhr-Universität Bochum.
The L4 is a UHV magnetron sputtering system with up to four rectangular magnetrons. The substrate is moved over the magnetrons in a sequantial deposition mode. Each magnetron is provided with an electro-pneumatic shutter which allows computer controlled deposition of multi-layers. The maximum substrate size is 6″. The film thickness is controlled by the scanning speed of the substrate and the magnetron power.
The L4 is compatible with all DCA substrate transfer systems including the CDC cluster tool system.
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