Published Article – Crystal Growth and Design – Paul Drude Institute

The Paul-Drude-Institute in Berlin employed the DCA P600 plasma-assisted MBE system to develop a novel technique for integrating strain-free GaN crystals on micrometer-sized patterned Si(0 0 1) substrates. The good optical properties together with the faceted morphology of the GaN crystals could be beneficial for the integration of space filling, multidirectional III−N/Si(0 0 1) light-emitting diodes. Read more →