All New DCAX-60 Atom source for Oxides and Nitrides

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Our all new DCAX-60 atom source is now available!

Designed to deliver neutral atomic gas species, for the growth of high-quality compound materials such as; GaN, GaInNAs, InGaN, InN, ultra-thin Al2O3 and high-K dielectrics.  As a result of having a 50mm beam diameter DCAX-60 is ideal for research of:

Nitride and Oxide MBE growth

Atomic Hydrogen surface treatments

Reactive Gas generation for UHV Sputtering and PLD applications.