S1000 Si/SiGe/Metal/Oxide MBE System

SGC1000 molecular beam epitaxy system
UHV cluster tool

The S1000 system is the biggest system in our Si MBE system range. The system is capable of growing on 300 mm silicon substrates with better than +/- 1.5% thickness and composition uniformity. The four high capacity electron guns and large capacity effusion cells are designed for production use.

 

 


The CDC300 UHV cluster tool chamber houses a robotic substrate handler which allows reliable and fast substrate transfer between process chambers and entry/exit chambers. The chamber has seven positions for process tools/chambers and can handle substrates up to 300 mm in diameter. This system has been installed at the University of Hannover, Institute for Semiconductor Devices and Electronic Materials. The system includes an XPS surface analysis chamber, metallization chamber, high temperature preheating chamber, SGC1000 growth chamber and cassette load lock.

The DCA SiGe/Si/Metal/Oxide MBE systems are in use in these leading laboratories:
  • Institute for Semiconductor Physics (IHP), Franfurt-Oder, Germany
  • KFA-Julich, Julich, Germany
  • Technical University of Chemnitz, Chemnitz, Germany
  • University of Catania, Catania, Italy
  • University of Hannover, Hannover, Germany
  • University of Stuttgart, Stuttgart, Germany
  • Trinity College, Dublin, Ireland
  • Motorola Research Laboratories (now Freescale), Tempe, Arizona, USA
    • DCA Instruments
    S1000 Features

  • Large capacity effusion
    cells and electron guns
  • Side mounted e-guns for easy access and service
  • Multi-zone substrate
    heater up to 1000 oC
  • Magnetically coupled
    linear shutters
  • Specially treated e-guns
    for silicon epitaxy and UHV use
  • Max. 300 mm substrate
    size
  • UHV cluster tool for substrate handling
  • wide beam RF source for oxygen
  • Water or liquid nitrogen cooled cryopanels


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    2007
    DCA Instruments Oy