Recently founded ShanghaiTech University has selected DCA Instruments to design and manufacture their new multi-MBE system. This custom-designed system will allow multiple epitaxial growth methods and materials to be used simultaneously. Two P600 MBE chambers and an M600 MBE chamber will be interconnected by a linear buffer chamber, which boasts an integrated mask exchange system to prevent cross-contamination between chambers.
About Sabina Hatch
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Entries by Sabina Hatch
DCA has completed the installation of a P600 MBE system at the Shanghai Institute of Technical Physics (SITP) of the Chinese Academy of Sciences. The P600 is designed to grow high-quality thin films of III-V semiconductors, with a focus on phosphorous compounds. The system features a linear buffer chamber with preheating stage (950oC) for degassing and cleaning samples prior […]
This summer DCA installed a state-of-the-art dual-chamber MBE system at the School of Physics and Astronomy, University of St. Andrews in Scotland. The custom-designed MBE system boasts two R450 growth chambers, a DCA-patented o-zone delivery system, and a linear buffer chamber equipped with sample storage. A bespoke vacuum suitcase that enables the transportation and transfer of samples under UHV to external analysis […]
The Shanghai Institute of Microsystem and Information Technology (SIMIT) took advantage of combining reactive MBE (DCA Instruments R450) and in-situ angle-resolved photoemission spectroscopy to systematically study the evolution of the low-energy electronic structure of SrRuO3 films with thickness thinning down to a nearly two-dimensional limit. Read more →
Dr. Gennady Logvenov at the Max Planck Institute employed the DCA R450 dual oxide MBE system to synthesize more than 100 epitaxial superlattices, in which single LaO layers in the La2CuO4 structure were substituted by SrO layers with the desired periodicity. The study represents a successful example of two-dimensional doping of superconducting oxide systems and […]
The Paul-Drude-Institute in Berlin employed the DCA P600 plasma-assisted MBE system to develop a novel technique for integrating strain-free GaN crystals on micrometer-sized patterned Si(0 0 1) substrates. The good optical properties together with the faceted morphology of the GaN crystals could be beneficial for the integration of space filling, multidirectional III−N/Si(0 0 1) light-emitting diodes. […]
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